收藏本站
Si7461DP
www.vishay.com
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
V GS(th)
I GSS
I DSS
I D(on)
R DS(on)
g fs
V DS = V GS , I D = -250 μA
V DS = 0 V, V GS = ± 20 V
V DS = -60 V, V GS = 0 V
V DS = -60 V, V GS = 0 V, T J = 70 °C
V DS ? -5 V, V GS = -10 V
V GS = -10 V, I D = -14.4 A
V GS = -4.5 V, I D = -12.6 A
V DS = -15 V, I D = -14.4 A
-1
-
-
-
-40
-
-
-
-
-
-
-
-
0.0115
0.0150
31
-3
± 100
-1
-10
-
0.0145
0.0190
-
V
nA
μA
A
?
S
Diode Forward
Voltage a
V SD
I S = -4.5 A, V GS = 0 V
-
-0.8
-1.2
V
Dynamic b
Total Gate Charge
Q g
-
121
190
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q gs
Q gd
R g
t d(on)
t r
t d(off)
t f
t rr
V DS = -30 V, V GS = -10 V, I D = -14.4 A
V DD = -30 V, R L = 30 ?
I D ? -1 A, V GEN = -10 V, R g = 6 ?
I F = -4.5 A, dI/dt = 100 A/μs
-
-
-
-
-
-
-
-
20
32
3
20
20
205
90
45
-
-
-
30
30
310
135
70
nC
?
ns
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2282-Rev. H, 04-Nov-13
2
Document Number: 72567
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7462DP-T1-GE3 MOSFET N-CH D-S 200V 8-SOIC
SI7465DP-T1-GE3 MOSFET P-CH 60V 3.2A PPAK 8SOIC
SI7530DP-T1-GE3 MOSFET N/P-CH 60V PWRPAK 8-SOIC
SI7620DN-T1-GE3 MOSFET N-CH 150V 13A 1212-8
SI7625DN-T1-GE3 MOSFET P-CH D-S 30V 1212-8 PPAK
SI7629DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
SI7634BDP-T1-E3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7636DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
相关代理商/技术参数
SI7462DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET
SI7462DP-T1-E3 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7462DP-T1-GE3 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463ADP-T1-GE3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET
SI7463DP 制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK
SI7463DP-T1 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 40V 11A 8PIN PWRPAK SO - Tape and Reel
SI7463DP-T1-E3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7463DP-T1-GE3 功能描述:MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube